| 主な論文・著書 |
- Initial oxidation phenomena of heavily phosphorus doped silicon in dry oxygen :Y. Kamiura , K. Hasegawa, Y. Mizokawa, K. Kawamoto
J. Vac. Sci. Technol. B, 20, No.6, November/December, pp.2187-2191(2002)
- The Chemical Composition Changes of Silicon and Phosphorus in the Process of Native Oxide Formation of Heavily Phosphorus Doped Silicon : W. B. Ying, Y. Mizokawa, Y. Kamiura, K. Kawamoto, W. Y. Yang Applied Surface Science, 181, pp.1-14 (2001).
- Evaluation of the Initial Oxidation of Heavily Phosphorus Doped Silicon Surfaces Using Angle-Dependent X-ray Photoelectron Spectroscopy : W. B. Ying, Y. Mizokawa, K. Tanahashi, Y. Kamiura, M. Iida, K. Kawamoto, W. Y. Yang
Thin Solid Films, 343-344, pp.393-396, (1999)
- Annealing Behavior of Phosphorus in Native Oxide Films on Heavily Phosphorus Doped Silicon : W. B. Ying, Y. Mizokawa, Y. B. Yu, Y. Kamiura, M. Iida,K. Kawamoto Applied Surface Science, 100/101, pp.556-560, (1996)
- Investigation of Reoxidation and Phosphorus Behavior in HF-Treated Heavily Doped Silicon Surfaces : Y. Kamiura, Y. Mizokawa, M. Iida, Y. Isobe and K. Kawamoto Jpn. J. Appl. Phys., vol.32, pp.4863-4869, (1993)
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